Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:44:40.378Z Has data issue: false hasContentIssue false
  • English
  • Français

LPE Growth of Mixed Composition HI-V “Virtual Substrates” for MID-Infrared Optoelectronic Devices

Published online by Cambridge University Press:  10 February 2011

Y. Mao  and
A. Krier
Y. Mao
Affiliation:
Advanced Materials & Photonics Group, School of Physics and Chemistry, Lancaster University, Lancaster LAI 4YB, UK.
A. Krier
Affiliation:
Advanced Materials & Photonics Group, School of Physics and Chemistry, Lancaster University, Lancaster LAI 4YB, UK.
Get access

Abstract

Liquid phase epitaxy can be effectively used to grow a thick graded ternary or quaternary buffer layer to provide a “virtual substrate” for subsequent device epitaxy. Grading characteristics of InGaAs, InAsSb and InAsSbP epitaxial layers grown by LPE are discussed. The effects of the principal LPE growth parameters on epiiayer thickness, surface morphology and composition, lattice-mismatch and photoluminescence efficiency were investigated and are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 49
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Webster, C.R., May, R.D., Trimble, C.A., Chave, R.G. and Kendall, J., Appl. Opt., 33, pp.454–471 (1994).Google Scholar
2. Lee, P.S., Majkovski, R.F. and Schreck, R.M., ‘Method for Determining Fuel and Engine oil consumption using tuneable diode laser spectroscopy’, US Patent No. 4,990,780, issued February 5(1991).Google Scholar
3. Lee, P.S., Majkovski, R.F. and Perry, T.A., IEEE Trans., BE- 38, 10, pp.966–970 (1991).Google Scholar
4. Heineck, H. and Veuhoff, E., Mater. Sci. and Eng., B21, pp.120–129 (1993).Google Scholar
5. Kuphal, E., Appl. Phys., A52, pp.380–409 (1991).Google Scholar
6. Stringfellow, G.B. and Greene, P., J. Phys. Chem. Solids, 30, pp. 1779 (1969).Google Scholar
7. Stringfellow, G.B., J. Crystal Growth, 27, pp. 21 (1974).Google Scholar
8. Parry, M.K. and Krier, A., J. Crystal Growth, 139, pp. 238–246 (1994).Google Scholar
9. Mao, Y. and Krier, A., J. Crystal Growth, 133, pp. 108–116 (1993).Google Scholar
10. Wilson, M.R., Krier, A. and Mao, Y., J. Elect. Mater., 25, pp 1439–1445 (1996).Google Scholar
11. Krier, A. and Mao, Y., Semicond. Sci. Technol., 10, pp. 930–936 (1995).Google Scholar
12. Parry, M.K. and Krier, A., Elect. Lett., 30, pp 1968–1969 (1994).Google Scholar
13. Mao, Y. and Krier, A., Elect. Lett., 32, pp 479–480 (1996).Google Scholar
14. Mao, Y. and Krier, A., 2.5μm Light Emitting Diodes in InAs0.36Sb0.20P0.44/InAs for HF Detection', to be published.Google Scholar
15. Hsieh, J., J. Crystal Growth, 27, pp. 49 (1974).Google Scholar
16. Booker, G.R., Titchmarsh, J.M., Fletcher, J., Darby, D.B., Hockly, M. and Al-Jassim, M., J. Crystal Growth, 45, pp. 407 (1978).Google Scholar
17. Astles, M.G., ‘Liquid-phase Epitaxial Growth of III-V Compound Semiconductor Materials and their Device applications’, Adam Hilger, P 20 (1990).Google Scholar
18. Gerritsen, H.J., Final Report, ‘Use of Room Temperature Infrared Diodes for Determining Methane Concentration in Air.’ United States Department of Interior, Mine Safety Research Centre Grant N. USBM G0155013 (March 1976), NT1S Number PB-262–649/AS.Google Scholar