Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T09:36:32.446Z Has data issue: false hasContentIssue false
  • English
  • Français

LPCVD Of Silicon Carbide Films From The Organosilanes Diethylsilane And Di-T-Butylsilane

Published online by Cambridge University Press:  15 February 2011

Roland A. Levy  and
James M. Grow
Roland A. Levy
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
James M. Grow
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
Get access

Abstract

In this paper, the kinetics and properties of amorphous LPCVD silicon carbide films synthesized from the single organosilane precursors diethylsilane (DES) or di-tbutylsilane (DTBS) are discussed. For DES, the growth rate is observed to vary linearly with flow rate and pressure, while for DTBS, a square root dependency is seen as a function of these parameters. An Arrhenius type behavior was observed for both chemistries yielding activation energy values of 40 and 25 kcal/mol for DES and DTBS respectively. The elemental composition of the films became progressively richer in carbon as the deposition temperature increased with stoichiometry occurring near 750°C. The film stress was dependent on carbon content and became compressive at compositions near Si0.35C0.65. The hardness and Young's modulus of the films increased with increasing carbon content reaching maxima near stoichiometry. Free-standing membranes produced under optimal processing conditions had a relatively low optical transmission due to excess carbon. Although, transmission characteristics were improved by adding NH3 in the reaction chamber, the resulting silicon carbonitride films exhibited undesirably high values of tensile stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 219
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. “Amorphous and Crystalline Silicon Carbide”, Ed. Harris, G. L. and Yang, C. Y. W., Springer Proceedings in Physics 34, Springer-Verlag, New York (1989).Google Scholar
2. “Amorphous and Crystalline Silicon Carbide”, Ed. Rahman, M. M., Yang, C. Y. W., and Harris, G. L., Springer Proceedings in Physics 43, Springer-Verlag, New York (1989).CrossRefGoogle Scholar
3. Luethje, H., Matthiessen, B., Harms, M., and Burns, A., Proc. SPIE Conf., 15, (1987).Google Scholar
4.. Ohshita, Y. and Ishitani, A., J. Appl. Phys. 66 (9), 4535 (1989).CrossRefGoogle Scholar
5. Brekel, C. H. J. van den and Bollen, L. J. M., J. Crystal Growth, 51, 310 (1981).CrossRefGoogle Scholar
6. Laidler, K. J., ”Chemical Kinetics”, p.266, McGraw Hill, New York (1965).Google Scholar
7. Claassen, W.A.P., Bloem, J., Valenburg, W.G.J.N., and Brekel, C.H.J. van den, J. Crystal Growth, 51, 267 (1982).Google Scholar
8. Eversteyn, F. C., Phillips Res. Rep., 29, 45 (1974).Google Scholar
9. Kern, W. in Microelectronic Materials amd Processes, ed. Levy, R.A., p 203, Kluwer Academic Publishers, Boston (1989).CrossRefGoogle Scholar
10. O'Neal, H. E., Ring, M. A., Organometallics, 7,1017 (1988).CrossRefGoogle Scholar
11. Muehlhoff, L, Choyke, W. J., Bozak, M. J., and Yates, J. T. Jr., Appl. Phys. Lett. 60, 2842 (1986).Google Scholar
12. Bozso, F., Muehlhoff, L., Trenary, M., Choyke, W. J., and Yates, J. T. Jr., Vac. Sci. Technol. 2, 1271 (1984).CrossRefGoogle Scholar
13. CRC Handbook of Chemistry and Physics, ed. Weast, R. C. and Astle, M. J., 60th Edition, CRC Press Inc. Boca Raton (1973).Google Scholar
14. Doerner, M. F. and Nix, W. D., J. Mater. Res., 1, 601 (1986).CrossRefGoogle Scholar
15. Oliver, W. C. and Pharr, G. M., J. Mater. Res., 7, 1564 (1992).CrossRefGoogle Scholar
16. Sneddon, I. E., Int. J. Eng. Sci., 3, 47 (1965).CrossRefGoogle Scholar