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Low-Temperature Infrared Absorption Measurement For Oxygen Concentration and Precipitates In Heavily-Doped Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

M. Koizuka ,
M. Inaba  and
H. Yamada-Kaneta
M. Koizuka
Affiliation:
Device Development Div., Fujitsu Ltd.4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki 211–88, Japan
M. Inaba
Affiliation:
Device Development Div., Fujitsu Ltd.4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki 211–88, Japan
H. Yamada-Kaneta
Affiliation:
Device Development Div., Fujitsu Ltd.4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki 211–88, Japan
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Abstract

We present a new IR absorption technique of measuring the dissolved interstitial oxygen concentration [Oi] and its reduction Δ [Oi] due to oxygen precipitation of the heavily-doped silicon crystal with doping level of about 1019 atoms/cm3. The method consists of the three steps: bonding the silicon wafer to a thick FZ silicon substrate by heat-treatment, thinning the wafer, and measuring the height of the 1136-cm−1 absorption peak of Oi at a temperature below 5 K. For a heavily doped wafer and the heavily doped substrate of an epitaxial wafer, we demonstrate examples of measuring the initial [Oi] and Δ [Oi] due to heat-treatment. Using this method, we investigate oxygen precipitation characteristics of the wafer heavily doped with boron. We found that the enhanced oxygen precipitation due to heavy boron-doping is expected if we perform preanneal at temperatures below 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 31
Copyright
Copyright © Materials Research Society 1997

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