Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:33:11.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Temperature Growth of High Quality InxGa1−xN by Atomic Layer Epitaxy

Published online by Cambridge University Press:  21 February 2011

K.S. Boutros ,
J.C. Roberts ,
F.G. McIntosh ,
E.L. Piner ,
N.A. El-Masry  and
S.M. Bedair
K.S. Boutros
Affiliation:
Electrical and Computer Engineering Department
J.C. Roberts
Affiliation:
Electrical and Computer Engineering Department
F.G. McIntosh
Affiliation:
Electrical and Computer Engineering Department
E.L. Piner
Affiliation:
Material Science and Engineering Department North Carolina State University, Raleigh, NC 27606
N.A. El-Masry
Affiliation:
Material Science and Engineering Department North Carolina State University, Raleigh, NC 27606
S.M. Bedair
Affiliation:
Electrical and Computer Engineering Department
Get access

Abstract

We report on the low temperature epitaxial growth of InxGa1−xN with 0≤x≤0.27 by Atomic Layer Epitaxy (ALE). GaN and InGaN single crystal films have been grown by ALE in the temperature range between 600 and 700 °C using the rotating substrate approach. Films were deposited on sapphire substrates using TMG, EdMIn, and NH3 as precursors. Up to 27% indium content has been achieved in the InGaN films. The FWHM of the (0002) InGaN peak by double crystal X-ray diffraction of these films was as small as 5 minutes. Room-temperature photoluminescence (PL) from these films was dominated by band edge emission between 365 nm and 446 nm. AlGaN/InGaN double heterostructures were grown in a hybrid reactor, in which the AlGaN barrier layers were grown by MOCVD and the InGaN active layer by ALE. The structures showed good crystal quality, and sharp PL emission with peak intensity at 410 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 213
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Yoshimoto, N., Matsuoka, T., Sassaki, T., and Katsui, A., Appl. Phys. Lett., 59, p.2251 (1991).Google Scholar
2 Dissanayake, A., Lin, J.Y., Jiang, H.X., Yu, Z.J., and Edgar, J.H., Appl. Phys. Lett., 65, p.2317(1994).Google Scholar
3 Karam, N.H., Parados, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El-Masry, N., and Bedair, S.M., Appl. Phys. Lett. 67 (1), p.94 (1995).Google Scholar
4 Boutros, K.S., McIntosh, F.G., Roberts, J.C., Bedair, S.M., Piner, E.L., and El-Masry, N.A., Appl. Phys. Lett. 67 (13), p. 1856 (1995).Google Scholar
5 Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T.C., Ferguson, I., and Razeghi, M., Appl. Phys. Lett. 66 (22), p.2958 (1995).Google Scholar
6 Ogino, T., and Aoki, M., Jap. Journ. Appl. Phys., 19 (12), p.2395 (1980).Google Scholar
7 Nakamura, S., and Mukai, T., Jap. J. Appl. Phys. 31, p.L1457 (1992).Google Scholar