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LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

Published online by Cambridge University Press:  25 February 2011

Ting-Yen Chiang ,
En-Huery Liu ,
Der-Hwa Yiin  and
Tri-Rung Yew
Ting-Yen Chiang
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
En-Huery Liu
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Der-Hwa Yiin
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
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Abstract

This paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 125
Copyright
Copyright © Materials Research Society 1992

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References

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