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Low-resistance Ohmic Contacts to N-face p-GaN for the Fabrication of Functional Devices

Published online by Cambridge University Press:  31 January 2011

Seung-Cheol Han ,
Jae-Kwan Kim ,
jun Young Kim ,
Joon Seop Kwak ,
Kangho Kim ,
Jong Kyo Kim ,
E. Schubert ,
Kyoung-Kook Kim  and
Ji-Myon Lee
Seung-Cheol Han
Affiliation:
[email protected], Sunchon National University, Materials Science & Metallurgical Engineering, sunchon, Jeonnam, Korea, Republic of
Jae-Kwan Kim
Affiliation:
[email protected], Sunchon National University, Materials Science & Metallurgical Engineering, sunchon, Korea, Republic of
jun Young Kim
Affiliation:
[email protected], Sunchon National University, School of applied materials engineering, suncheon, Korea, Republic of
Joon Seop Kwak
Affiliation:
[email protected], Sunchon National University, Materials Science & Metallurgical Engineering, sunchon, Korea, Republic of
Kangho Kim
Affiliation:
[email protected], Korea Photonics Technology Institute, Gwangju, Korea, Republic of
Jong Kyo Kim
Affiliation:
[email protected], The Future Chips Constellation, Electrical, Computer, and Systems Engineering, Troy, New York, United States
E. Schubert
Affiliation:
[email protected], The Future Chips Constellation, Electrical, Computer, and Systems Engineering, Troy, New York, United States
Kyoung-Kook Kim
Affiliation:
[email protected], Korea Polytechnic University, Nano-Optical Engineering, Siheung, Korea, Republic of
Ji-Myon Lee
Affiliation:
[email protected], Sunchon National University, Materials Science & Metallurgical Engineering, suncheon, Korea, Republic of
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Abstract

The electrical properties of Ni-based ohmic contacts N-face p-type GaN are presented. The specific contact resistance of N-face p-GaN exhibits a liner decrease from 1.01 × cm2 to 9.05 × 10-3 Ω cm2 for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature Furthermore, the specific contact resistance could be decreased by four orders of magnitude to 1.03 × 10-4 Ω cm2 as a result of surface treatment using an alcohol-based (NH4)2S solution. The depth profile data measured by the intensity of O1s core peak in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer of GaN. In addition, a Ga 2p core-level peak showed a red-shift of binding energy by 0.3 eV by alcohol-based (NH4)2S treatment, indicating that the surface Fermi level was shifted toward the valence-band edge. Thus, the low ohmic contact behavior observed in our treated sample might be explained in terms of the removal of the oxide layer and reducing the barrier heights by reduced band-bending effect.

Keywords

Gaelectrical propertiesx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-16
Copyright
Copyright © Materials Research Society 2010

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