Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:41:43.998Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Frequency Scanning Capacitance Microscopy

Published online by Cambridge University Press:  10 February 2011

Š. Lányi  and
M. Hruškovic
Š. Lányi
Affiliation:
Institute of Physics, Slovakian Academy of Sciences, Dúbravská cesta 9, 842 28 Bratislava, Slovakia, [email protected]
M. Hruškovic
Affiliation:
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia
Get access

Abstract

The operation principle and main properties of a Scanning Capacitance Microscope (SCM) are described. It is called low-frequency, because in its design typical low-frequency techniques are utilised. The main attention is focused on its lateral resolution, signal-to-noise ratio and the possibility to detect dielectric losses.

Mapping the electrostatic field of a shielded microscope probe was used to calculate the stray capacitance, flux density, sensitivity and contrast obtained on a flat conducting surface, as well as on a surface covered by a thin dielectric film. The effect of dielectric losses, represented by a parallel conductance, on the detected capacitance and the resulting phase shift has been derived.

Using the results of mapping, the requirements on a SCM input stage and the possible solutions are discussed. From the point of view of frequency range and noise the best is an electrometric input stage, with input impedance represented by its capacitance.

The achieved signal-to-noise ratio of the low frequency Scanning Capacitance Microscope renders the extension of the working frequency range to lower frequencies. The input stage can be optimised for a frequency range from about 1 kHz to a few MHz, with the possibility to extend it to about 10 MHz at the cost of reduced sensitivity at the lowest frequencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Matey, J. R., U.S Patent No. 4 481 616 (6 November 1984).,Google Scholar
Palmer, R.C., Denlinger, E.J. and Kawamoto, H., RCA Rev. 43, p. 194 (1982).Google Scholar
2. Two-Dimensional Semiconductor Dopant Profiling Development Project, Funded by Digital Instruments/SEMATECH. Project initiated: 8/1/1995.Google Scholar
3. Matey, J. R. and Blanc, J., J. Appl. Phys. 57, 1437 (1985).Google Scholar
4. Kleinknecht, H.P., Sandercock, J.R. and Meier, H., Scanning Microscopy 2, 1839 (1988).Google Scholar
5. Williams, C. C., Hough, W.P. and Rishton, S.A., Appl. Phys. Lett. 55, 203 (1989).Google Scholar
6. Bugg, C.D. and King, P.J., J. Phys. E 21, 147 (1988).Google Scholar
7. Martin, Y., Abraham, D.W. and Wickramasinghe, H.K., Appl. Phys. Lett. 52, 1103 (1988).Google Scholar
8. Lányi, Š., Török, J. and Řehůřek, P., Rev. Sci. Instrum., 65, 2258 (1995).Google Scholar
9. Lányi, Š. and Török, J., J. Elect. Eng. 46, 126 (1995).Google Scholar
10. Digital Instruments, Santa Barbara, CA, USA.Google Scholar
11. Park Scientific Instruments, Sunnyvale, CA, USA.Google Scholar
12. Barrett, R.C. and Quate, C.F., J. Appl. Phys. 70, 2725 (1991).Google Scholar
13. Lányi, Š., Török, J. and Řehůřek, P., J. Vac. Sci. Technol. B 14, 892 (1996).Google Scholar
14. Zienkiewicz, O.C., The Finite Element Method. McGraw-Hill, 1977.Google Scholar
15. MEP 5.1, of authors Děděk, L. and Dědková, J., Faculty of Electrical Engineering and Computer Science, Technical University of Brno, Brno, Czech Republic.Google Scholar
16. Děděk, L. and Dědková, J., Proc, of the 4.ANSYS Users Meeting, Sept. 26–27, 1996, Blansko - Češkovice, Czech Republic.Google Scholar
17. Lányi, Š., will be published.Google Scholar
18. Picotto, G.B., Desogus, S., Lányi, Š., Nerino, R. and Sosso, A., J. Vac. Sci. Technol. B 14, 897 (1996).Google Scholar