Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-20T06:18:25.050Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Energy Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Carsten Rosenblad ,
Thomas Graf ,
Alex Dommann  and
Hans Von känel
Carsten Rosenblad
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
Thomas Graf
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
Alex Dommann
Affiliation:
Neu-Technikum Buchs, CH-9470 Buchs, Switzerland
Hans Von känel
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
Get access

Abstract

We discuss a new method for plasma enhanced chemical vapor deposition, applied to the epitaxial growth of Si and of Si-Ge heterostructures. Growth rates up to 5 nm/s become possible at substrate temperatures below 600°C, by utilizing very intense but low energy plasmas to crack the reactive gases, SiH4 and GeH4, and to speed up the surface kinetics. The method is applied to the synthesis of step-graded Si-Ge buffer layers, exhibiting the well known cross-hatched surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 301
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Meyerson, B.S., LeGoues, F.K., Guyen, T.N., and Harame, D.L., Appl. Phys. Lett. 50, 113 (1987)Google Scholar
[2] For a recent review, see Schdffler, F., Semicond. Sci. Technol. 12, 1515 (1997)Google Scholar
[3] Donahue, T.J. and Reif, R., J. Appl. Phys. 57, 2757 (1985)Google Scholar
[4] Nagai, I., Tahakagi, T., Ishitani, A., Kuroda, H., and Yoshikawa, M., J. Appl. Phys. 64, 5183 (1988)Google Scholar
[5] Tae, H.-S.. Hwang, S.-H., Park, S.-A., Yoon, E., and Whang, K.-W., Appl. Phys. Lett. 64, 1021 (1994)Google Scholar
[6] Ramm, J., Beck, E., Ziiger, A., Dommann, A., and Pixley, R.E., Thin Solid Films 222,126 (1992)Google Scholar
[7] The plasma potential has been shown to be close to ground, such that a substrate bias referenced to ground reflects directly the energy of ions impinging on the substate. See Korner, N., Beck, E., Dommann, A., Onda, N., and Ramm, J., Surface and Coatings Technology 76–77, 731 (1995)Google Scholar
[8] Rosenblad, C., Deller, H.R., Dommann, A., Meyer, T., Schroeter, P., and von Kdnel, H., unpublishedGoogle Scholar
[9] Li, J.H., Holy, V., and Bauer, G., J. Appl. Phys. 82, 2881 (1997)Google Scholar
[10] Feenstra, R.M., Lutz, M.A., Stern, F., Ismail, K., Mooney, R.P., LeGoues, F.K., Stanis, C., Chu, J. O., and Meyerson, B.S., J. Vac. Sci. Technol. B 13, 1608 (1995)Google Scholar