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Low-Dielectric Constant SiO(F,C) Films for ULSI Interconnections Prepared by CF4 Plasma Ion Implantation

Published online by Cambridge University Press:  10 February 2011

Yuanzhong Zhou ,
Shu Qin ,
Chung Chan  and
Paul K. Chu
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Lab, Dept. of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Shu Qin
Affiliation:
Plasma Science and Microelectronics Lab, Dept. of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Chung Chan
Affiliation:
Plasma Science and Microelectronics Lab, Dept. of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Paul K. Chu
Affiliation:
Dept. of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong
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Abstract

Plasma ion implantation (PII) doping technique has been utilized to prepare a new lowdielectric constant (low k) material SiO(F,C). Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor. The effective dielectric constant of the films was significantly reduced after PH doping. An analysis of a double layer model indicated that a high quality dielectric layer with a dielectric constant down to 2.8 can be achieved by an optimized PII process. Contrasting to other conventional low-k material techniques, PII process also improved bulk resistivity and electrical field breakdown strength. The improvement possibly resulted from adding carbon into the films. The etching effect of CF4 PII could be beneficial to planarization and gap filling of dielectric interlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 63
Copyright
Copyright © Materials Research Society 1998

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References

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