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Low-damage patterning of pentacene using a SiNx/PVA-photoresistmulti-layermask

Published online by Cambridge University Press:  01 February 2011

Nobukazu Hirai ,
Nobuhide Yoneya ,
Noriyuki Kawashima ,
Makoto Noda ,
Kazumasa Nomoto ,
Masaru Wada  and
Jiro Kasahara
Nobukazu Hirai
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
Nobuhide Yoneya
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
Noriyuki Kawashima
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
Makoto Noda
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
Kazumasa Nomoto
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
Masaru Wada
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
Jiro Kasahara
Affiliation:
Materials Laboratories, Sony Corporation,Higashikojiya,Ota-ku,Tokyo 144-033, Japan
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Abstract

We have developed a photolithographic technique of patterning a pentacene layer with low damage using a SiNx/poly(vinyl alcohol) (PVA) photoresist multi-layer mask. We used a hexavalent chromium-free PVAphotoresist. By inserting a SiNx buffer layer between the pentacene layer and the PVAphotoresist layer, we could suppress an increase in off current caused by interaction between pentacene and the photosensitive functional group in the PVA photoresist. In the patterning process, we found that carriers generated by O2-plasma doped into the pentacene layer and the off current of the pentacene thin-film transistor (TFT) increased.We also found that successive annealing caused de-doping of the pentacene layer and reduced off current of the pentacene TFT.We investigated the density of doped carriers using a simplemodel of a planer pentacene diode aswell as a pentaceneTFT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 870: Symposium H – Giant-Area Electronics on Nonconventional Substrates , 2005 , H1.7
Copyright
Copyright © Materials Research Society 2005

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References

[1] Nomoto, K. et al., ISSCC 2004 Visuals Supplement, 715 (2004); Digest of Tech. Papers of AM-LCD 04, 31 (2004).Google Scholar
[2]Sheraw, C.D. et al., App. Phys. Lett. 80, 1088 (2002).Google Scholar
[3]Gelinck, G.H. et al., NatureMaterials 3, 106 (2004).Google Scholar
[4] Baude, P. F. et al., App. Phys. Lett. 82, 3964 (2003).Google Scholar
[5]Someya, T. et al., Proc.Natl.Acad. Sci.U.S.A. 101, 9966 (2004).Google Scholar
[6]Gundlach, D. J. et al., App. Phys. Lett. 74, 3302 (1999).Google Scholar
[7]Sheraw, C.D. et al., 42nd ElectronicMaterialsConference Digest, 24 (2000).Google Scholar
[8]Dimitrakopoulos, C.D. et al., J.Appl. Phys. 80, 2501 (1996).Google Scholar