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Low Temperature ZnO TFTs Fabrication with Al and AZO Contacts for Flexible Transparent Applications

Published online by Cambridge University Press:  07 February 2013

Gerardo Gutierrez-Heredia ,
Israel Mejia ,
Norberto Hernandez-Como ,
Martha E. Rivas-Aguilar ,
Victor H. Martinez-Landeros ,
Francisco S. Aguirre-Tostado ,
Bruce E. Gnade  and
Manuel Quevedo
Gerardo Gutierrez-Heredia
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA. Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Israel Mejia
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA.
Norberto Hernandez-Como
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA.
Martha E. Rivas-Aguilar
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA.
Victor H. Martinez-Landeros
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA. Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Francisco S. Aguirre-Tostado
Affiliation:
Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Bruce E. Gnade
Affiliation:
Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Manuel Quevedo
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA. Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
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Abstract

Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100 °C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using ebeam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80 %.

Keywords

oxideZnAl
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 299 - 303
Copyright
Copyright © Materials Research Society 2013 

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