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Low Temperature Vibrational Properties of Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

R. S. Crandall ,
E. Iwaniczko ,
A. H. Mahan ,
X. Liu  and
R.O. Pohl
R. S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, [email protected]
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
A. H. Mahan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
X. Liu
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853-2501
R.O. Pohl
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853-2501
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Abstract

We present internal friction and shear modulus measurements of amorphous silicon (a-Si) and germanium (a-Ge) films. The temperature independent plateau in internal friction below 10 K, common to all amorphous solids, also exists in these films. However, its magnitude which depends critically on the deposition method is smaller than found for all other amorphous solids. In particular, hydrogenated a-Si with about 1 at. % H prepared by hot-wire chemical-vapor-deposition leads to an internal friction nearly three orders of magnitude smaller than observed for all other amorphous solids. The internal friction increases after the hydrogen is removed by effusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 585
Copyright
Copyright © Materials Research Society 1998

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