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A Low Temperature, Solution Phase Synthesis of III-V Semiconductor Nanocrystals

Published online by Cambridge University Press:  15 February 2011

Shreyas S. Kher  and
Richard L. Wells
Shreyas S. Kher
Affiliation:
Department of Chemistry, Paul M. Gross Chemical Laboratories, Duke University, Durham, North Carolina 27708, U.S.A.
Richard L. Wells
Affiliation:
Department of Chemistry, Paul M. Gross Chemical Laboratories, Duke University, Durham, North Carolina 27708, U.S.A.
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Abstract

Nanocrystalline materials have been intensely investigated in the recent past due to the novel properties associated with size-quantized particles. We have developed a new method for high yield, solution phase synthesis of nanocrystalline III-V semiconductors which eliminates the use of substituted or unsubstituted Group V hydrides and Group III alkyls. Our approach consists of in situ syntheses of (Na/K)3E (E = P, As, Sb) in aromatic solvents and subsequent reactions of these pnictides with Group III halide solutions in coordinating solvents. The nanocrystalline III-V semiconductors GaP, GaAs, GaSb, InP, InAs and InSb are readily prepared in a wide range of particle sizes (4–36 nm) and in high yields. The resultant Ill-V materials have been characterized by XRD, EDXA, TEM and elemental analyses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 351: Symposium V – Molecularly Designed Ultrafine/Nanostructured Materials , 1994 , 293
Copyright
Copyright © Materials Research Society 1994

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