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Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure

Published online by Cambridge University Press:  15 February 2011

D. P. Adamst ,
D. J. Eaglesham  and
S. M. Yalisove
D. P. Adamst
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J., 07974. Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, MI, 48109-2136.
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J., 07974.
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J., 07974.
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Abstract

Hydrogen is shown to influence the surface roughness during low temperature Si MBE. Small partial pressures (1 × 10-7 Torr) of deuterium, introduced during Si growth at 310°C, are sufficient to increase the surface width to ∼30 Å before breakdown of epitaxy. This work is consistent with previous studies of the dependence of epitaxial thickness on hydrogen partial pressure and supports a model in which surface roughening leads to the breakdown of epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 29
Copyright
Copyright © Materials Research Society 1993

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