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Low Temperature Photoluminescence Studies of Narrow Bandgap Gaassbn Quantum Wells on GaAs

Published online by Cambridge University Press:  11 February 2011

K.E. Waldrip ,
E.D. Jones ,
N.A. Modine ,
F. Jalali ,
J.F. Klem  and
G.M. Peake
K.E. Waldrip
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
E.D. Jones
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
N.A. Modine
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
F. Jalali
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
J.F. Klem
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
G.M. Peake
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
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Abstract

We present low-temperature (T = 4K) photoluminescence studies of the effect of adding nitrogen to 6-nm-wide single-strained GaAsSb quantum wells on GaAs. The samples were grown by both MBE and MOCVD tech-niques. The nominal Sb concentration is about 30%. Adding about 1 to 2% N drastically reduced the bandgap energies from 1 to 0.75 eV, or 1.20 to 1.64 μm. Upon performing ex situ rapid thermal anneals, 825°C for 10s, the band gap energies as well as the photoluminescence intensities increased. The intensities increased by an order of magnitude for the annealed samples and the band gap energies increased by about 50 - 100 meV, depending on growth temperatures. The photoluminescence linewidths tended to decrease upon annealing. Preliminary results of a first-principles band structure calculation for the GaAsSbN system are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M10.3
Copyright
Copyright © Materials Research Society 2003

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References

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