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Low Temperature Oxidation Processing with High Purity Ozone

Published online by Cambridge University Press:  10 February 2011

A. Kurokawa ,
S. Ichimura ,
H. J. Kang  and
D. W. Moon
A. Kurokawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tukuba 305, JAPAN
S. Ichimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tukuba 305, JAPAN
H. J. Kang
Affiliation:
Chungbuk National University, Department of Physics, Cheongju, KOREA
D. W. Moon
Affiliation:
Korea Research Institute of Standards and Science, Taejon, KOREA
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Abstract

To lower the temperature of oxide-passivation processing the high- purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 269
Copyright
Copyright © Materials Research Society 1996

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