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Low Temperature Oxidation of Cu-Base Leadframe and Cu/Emc Interface Adhesion

Published online by Cambridge University Press:  10 February 2011

Soon-Jin Cho  and
Kyung-Wook Paik
Soon-Jin Cho
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea, [email protected]
Kyung-Wook Paik
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea, [email protected]
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Abstract

Low temperature oxidation of a Cu-base leadframe has been investigated to understand the effect of Cu oxidation on the adhesion between Cu-base leadframes (Cu L/F) and epoxy molding compounds (EMC). From the kinetic studies on the oxidation, oxide growth was found to follow the parabolic rate law in the temperature range of 150 °C to 300 °C and the activation energy for the oxidation was 17.0 kcal/mol. X-ray photoelectron spectroscopy (XPS) studies confirmed that the oxide film consisted of Cu2O, CuO, and NiO. It was shown that the early stage of oxidation improved the adhesion strength. Furthermore the optimum copper oxide thickness required for the maximum pull strength ranged between 20 nm and 30 nm. The high pull strength was presumably due to the increase of surface wettability and mechanical interlocking effects resulting from copper oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 445: Electronic Packaging Materials Science IX , 1996 , 275
Copyright
Copyright © Materials Research Society 1997

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