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Low Temperature Metal Organic Chemical Vapor Deposition (LTMOCVD) of Electronic Materials

Published online by Cambridge University Press:  26 February 2011

Alain E. Kaloyeros ,
Paul J. Toscano ,
Richard B. Rizk ,
Victor Tulchinsky  and
Alex Greene
Alain E. Kaloyeros
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Paul J. Toscano
Affiliation:
Chemistry Department, State University of New York at Albany, Albany, NY 12222
Richard B. Rizk
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Victor Tulchinsky
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Alex Greene
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

High quality amorphous and crystalline silicon carbide thin films were produced by low temperature metal-organic chemical vapor deposition (LTMOCVD) using the organometallic precursor tetraethynylsilane, Si(C2 H)4. LTMOCVD, which was developed by the present investigators, uses single source precursors containing all the elemental constituents desired in the target material already directly bonded. This approach eliminates the inherent limitations of conventional MOCVD where separate precursors are used for each of the individual components of the desired compound. LTMOCVD thus combines the ability to deposit films at low temperatures, which is characteristic of physical deposition techniques, with the ability to provide complete coverage at steps or irregularities on the semiconductor surface, which is characteristic of chemical deposition techniques. In addition, the precursors employed are non-toxic, non-hazardous and easy to handle. Consequently, LTMOCVD can produce compound semiconductors on thermally fragile or chemically sensitive substrates. The SiC films were grown in a hot-wall CVD reactor at a reactor pressure of 10−6-10−3 torr and substrate temperature in the range 300–700°C. Characterization studies were performed using electron diffraction (ED), Auger electron spectroscopy (AES), Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure– contaminant levels were below the detection limits of the techniques employed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 409
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Ghandhi, S.K. and Bhat, I.B., MRS Bulletin 13, 37 (1988).Google Scholar
2 Messier, R., MRS Bulletin 13, 18 (1988).Google Scholar
3 Kukimoto, H., Ban, Y., Komatsu, H., Takechi, M., and Ishizaki, M., J. Cryst. Growth 77, 223 (1986).Google Scholar
4 Bedair, S.M., Whisnant, J.K., Karam, N.H., Griffis, D., El-Masry, N.A., and Stadelmaier, H.H., J. Cryst. Growth 77, 229 (1986).Google Scholar
5 Balk, P., Fischer, M., Grundann, D., Luckerath, R., Luth, H., and Richter, W., J. Vac. Sci. Technol. B5, 1453 (1987).Google Scholar
6 Irvine, S.J.C., CRC Critical Reviews in Solid State and Materials Science 13, 279 (1987).Google Scholar
7 See, for instance, the review article by Kumagai, H. Y., in Chemical Vapor Deposition 1984, edited by Robinson, M. C., Brekel, C. H. J. vanden, Cullen, G. W., Blochner, J. M. Jr, and Rai-Choudhury, P. (the Electrochemical Society, Pennington, NJ, 1984) p. 198.Google Scholar
8 Bozso, F., Yates, J. T. Jr, Choyke, W. J., and Muehlhoff, L., J. Appl. Phys. 57, 2771 (1985).Google Scholar
9 Stinton, D. P., Besmann, T. M., and Lowden, R. A., Ceram. Bull. 67, 350 (1988).Google Scholar
10 Houle, F. A., Appl Phys. A41, 315 (1986).Google Scholar
11 Green, M. L. and Levy, R. A., Metals, J., 63 (June 1985).Google Scholar
12 Könenkamp, R., Phys. Rev. B36 (1987) 2938.Google Scholar
13 Kaloyeros, A.E., Feng, A., Garhart, J., Brooks, K.C., and Williams, W.S., in the Proceedings of the Third Annual Conference on Superconductivity at Buffalo (1989) in press.Google Scholar
14 Kaloyeros, A.E., Hoffman, M.P. and Williams, W.S., Thin Solid Films 141, 237 (1986).Google Scholar
15 Kaloyeros, A.E., Toscano, P.J., and Tulchinsky, V., to be published.Google Scholar
16 Kaloyeros, A.E., Garhart, J., Ghosh, S., Brooks, K.C., Saxena, A., and Luehrs, F., submitted to the Journal of Electronic Materials (1989).Google Scholar
17 Kaloyeros, A.E., Brooks, K.C., Feng, A., and garhart, J., submitted to the Proceedings of the MRS Fall Meeting on High-Temperature Superconductors (Boston, Ma, 1989).Google Scholar
18 Kaloyeros, A.E., Williams, W.S., and Constant, G., Rev. Sci. Instrum. 59, 1209 (1988).Google Scholar