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Low Temperature Lateral Epitaxial Growth of Silicon Carbide on Silicon

Published online by Cambridge University Press:  15 March 2011

Chacko Jacob ,
Juyong Chung ,
Moon-Hi Hong ,
Pirouz Pirouz  and
Shigehiro Nishino
Chacko Jacob
Affiliation:
Dept. of Electronics and Information Science, Kyoto Institute of Technology, Kyoto, 606-8585, Japan
Juyong Chung
Affiliation:
Dept. of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
Moon-Hi Hong
Affiliation:
Dept. of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
Pirouz Pirouz
Affiliation:
Dept. of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
Shigehiro Nishino
Affiliation:
Dept. of Electronics and Information Science, Kyoto Institute of Technology, Kyoto, 606-8585, Japan
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Abstract

To reduce the defect density inherent in conventional heteroepitaxial growth of SiC on Si, selective epitaxy followed by lateral epitaxial growth was performed in a conventional atmospheric pressure chemical vapor deposition (APCVD) system. The source gas was primarily hexamethyldisilane (HMDS). Hydrogen was used as the carrier gas and small amounts of hydrogen chloride (HCl) were added to improve the selectivity. Si(001) wafers, with an oxide layer (∼ 700 nm thick) as a mask, were used as substrates. The grown films were analyzed using optical microscopy and scanning electron microscopy (SEM). In earlier work, we had demonstrated the problems associated with the application of this technique – viz., oxide degradation and high growth temperature. Using HMDS, the growth temperature has been considerably reduced allowing the continued use of an oxide mask. Selective growth was demonstrated in films grown at 1250° and below.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.1.1
Copyright
Copyright © Materials Research Society 2000

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References

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