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Low Temperature Laser-Assisted Gas Phase Reactivity of TMGa with NH3 and Oxygen-Containing Compounds (H2O, CH3OH, O(CH3)2) in Constrained Pulsed Expansions

Published online by Cambridge University Press:  11 February 2011

Alexander Demchuk ,
Michael Lynch ,
Steven Simpson  and
Brent Koplitz
Alexander Demchuk
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Michael Lynch
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118, U.S.A.
Steven Simpson
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118, U.S.A.
Brent Koplitz
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118, U.S.A.
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Abstract

The present work reports on the study of III-V gas phase reactivity in constrained gas pulse expansions of trimethylgallium (TMGa) and oxygen derivative compounds (H2O, CH3OH, O(CH3)2) with and without ammonia. The precursors are introduced separately into a high vacuum chamber via a multipulsed gas nozzle assembly. The gas mixtures are then exposed to a UV pulse from an ArF excimer laser (λ=193 nm) and the products are mass analyzed with a quadrupole mass spectrometer. The efficient laser-assisted growth of Ga-O-containing clusters in the form of [(CH3)2GaOR] x, where R is H or CH3, has been revealed. Different behavior can be seen in the reaction of TMG and the oxygen species depending on the presence of H atoms bonded to the oxygen. Significant influence of NH3 on cluster formation and oxygen incorporation is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.7
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Demchuk, A., Porter, J., Beuscher, A., Dilkey, A., and Koplitz, B., Chem. Phys. Lett. 283, 231 (1998).Google Scholar
2. Demchuk, A., Porter, J., and Koplitz, B., J. Phys. Chem. A 102, 8841 (1998).Google Scholar
3. Demchuk, A., Simpson, S. and Koplitz, B. in Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Deposition II, edited by Swihart, M.T., Allendorf, M.D., and Meyyappan, M., (Electrochem. Soc. Proc. 2001–13, Pennington, NJ, 2001) pp. 389–396.Google Scholar
4. Coates, G. E., J. Chem. Soc. 2003, 1951.Google Scholar
5. Zaouk, A., Salvetat, E., Sakaya, J., Maury, F., and Constant, G., J. Crystal Growth. 55, 135 (1981).Google Scholar
6. Moss, R. H., J. Crystal Growth 68, 78 (1984).Google Scholar
7. Almond, M. J., Drew, M. G. B., Jenkins, C. E., and Rice, D. A. J. Chem. Soc. Dalton Trans. 1, 5 (1992).Google Scholar
8. Watwe, R. M., Dumesic, J. A., Kuech, T. F., J. Cryst. Growth. 221, 751 (2000).Google Scholar
9. Thayer, J. S., Organometallic Chemistry, (VCH Publisher, Inc: New York, 1988) pp. 31–38.Google Scholar
10. Bergman, U., Reimer, V., and Atakan, B., Phys. Stat. Sol. (a) 176, 719 (1999).Google Scholar
11. Demchuk, A., Cahill, J., Simpson, S. and Koplitz, B., Chem. Phys. Lett. 348, 217 (2001).Google Scholar