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Low Temperature Kinetics for the Growth and Decay of Band-Tallcarriers and Dangling Bonds in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Niko Schultz  and
P.C. Taylor
Niko Schultz
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
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Abstract

In hydrogenated amorphous silicon (a-Si:H), the kinetics of the light induced production of silicon dangling bonds and long-lived band-tail electrons and holes has been measured at temperatures between 65 and 340 K using light induced electron spin resonance (LESR). Below about 150 K the measurement of Si dangling bonds is masked by the accumulation of long-lived band-tail carriers. The kinetics of the growth and decay of these long-lived, trapped band-tail carriers consists of very fast components (τ < ms) and very long components (τ > h). Optical quenching of these long-lived carriers is not efficient at quenching energies of 0.6 eV. Afler removal of these long-lived band tail carriers by annealing at about 250 K we find that the total production of silicon dangling bonds at 65 K after 10 h of illumination is about a factor of five less than at 340 K. The dangling bond production resulting from 10 h of illumination is well fit to an underlying mechanism that, if thermally activated, exhibits an activation energy of approximately 10 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 353
Copyright
Copyright © Materials Research Society 1999

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