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Low Temperature Growth of PZT(52/48) Thin Films using Rf Magnetron Sputtering Method

Published online by Cambridge University Press:  10 February 2011

Tae Song Kim ,
Dong Joo Kim ,
Jeon Kook Lee  and
Hyung Jin Jung
Tae Song Kim
Affiliation:
Division of Ceramics, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
Dong Joo Kim
Affiliation:
Division of Ceramics, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
Jeon Kook Lee
Affiliation:
Division of Ceramics, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
Hyung Jin Jung
Affiliation:
Division of Ceramics, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
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Abstract

Comparatively low temperature growth of Pb(Zr0.52Ti0.48)O3 thin films was accomplished by using rf magnetron sputtering process. Well crystallized PZT thin films (4000Å thickness) were synthesized on Pt/Ti/SiO2/Si(100) substrate at the temperature as low as 5200°C. The polycrystalline PZT perovskite phase formation was confirmed with XRD analysis. Remanent polarization(Pr) and coercive field(Ec) of as-grown film (4000Å) were 8–30 μC/cm2 and 24–64 kV/cm with the applied voltage variation(5–17 V). The post annealing enhances the electrical properties even at 500°C, which is below the as-grown temperature(520°C). The increase of annealing temperature resulted in the consequent increase of remanent polarization and the decrease of coercive field. The values of dielectric constant(ε′ ) and tan δ measured with small signal sign wave(1V, 10kHz) were 1207 and 0.066 in case of as-grown film (4000Å).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 243
Copyright
Copyright © Materials Research Society 1996

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