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Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

S. Xin ,
K. F. Longenbach ,
C. Schwartz ,
Y. Jiang  and
W. I. Wang
S. Xin
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
K. F. Longenbach
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
C. Schwartz
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
Y. Jiang
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
W. I. Wang
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
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Abstract

GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produce a metal-rich surface. Devices grown at a substrate temperature of 500 °C exhibit threshold current densities below 1 kA/cm2. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, low temperature (10 K) photoluminescence of single quantum wells grown with this technique exhibit full-width half maximum values, comparable to that attainable by higher temperature growth techniques. The improved quality of these low temperature grown quantum structures is attributed to both a smoothing of the growth front and a reduction of excess As during the modulated beam epitaxy process. The high growth rates and less frequent shutter operation of this technique make it a more practical than migration enhanced epitaxy or atomic layer epitaxy for low temperature growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 203
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Casey, H.C. Jr., Cho, A.Y., and Barnes, P.A., IEEE J. Quantum Elec., QE–11, 467(1975)CrossRefGoogle Scholar
[2] Tsang, W.T.,Reinhart, F.K., and Ditzenberger, J.A., Appl. Phys. Lett., 36, 118(1980).CrossRefGoogle Scholar
[3] Cho, A.Y., Casey, H.C. Jr., Radice, C., and Foy, P.W., Electron. Lett., 16, 72 (1980).CrossRefGoogle Scholar
[4] Horikoshi, Y., Kawashima, M.,and Yamaguchi, H., Jpn. J. Appl. Phys., 25, L868 (1986).CrossRefGoogle Scholar
[5] Horikoshi, Y., Kawashima, M.,and Yamaguchi, H., Appl. Phys. Lett., 50,1686(1987).Google Scholar
[6] Madukar, A., Lee, T.C., Yen, M.Y., Chen, P., Kim, J.Y., Ghaisis, S.V., and Newman, P.G., Appl. Phys. Lett., 46, 1148 (1985).Google Scholar
[7] Tu, C.W., Miller, R.C., Wilson, B.A., Petroff, P.M., Harris, T.D., Kopf, R.F., Sputz, S.K., and Lamont, M.G., J. Crystal Growth, 81, 159 (1987).Google Scholar
[8] Nagata, S. and Tanaka, T., J. Appl. Phys., 48, 940(1977).CrossRefGoogle Scholar
[9] Tsang, W.T., and Swaminathan, V., Appl. Phys. Lett., 39,486(1981).Google Scholar
[10] Wicks, G., Wang, W.I., Wood, C.E.C., Eastman, L.F., and Rathbun, L., J. Appl. Phys., 52, 5972(1981).Google Scholar
[11] Cho, A.Y., Thin Film Solids, 100, 291(1983).CrossRefGoogle Scholar
[12] Shiraki, Y., Mishima, T. and Morioka, M., J. Crystal Growth, 81, 164 (1987).Google Scholar
[13] Fukunaga, T., Takamori, T., and Nakashima, H., J. Crys. Growth, 81,85 (1987).CrossRefGoogle Scholar
[14] Xin, S., Longenbach, K.F., and Wang, W.I., Electron. Lett., 27, 199 (1991).CrossRefGoogle Scholar