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Low Temperature Gate Dielectrics for Tft Applications

Published online by Cambridge University Press:  28 February 2011

B L Jones  and
D B Meakin
B L Jones
Affiliation:
GEC Research Ltd, Hirst Research Centre, East Lane, Wembley, Middx, UK
D B Meakin
Affiliation:
GEC Research Ltd, Hirst Research Centre, East Lane, Wembley, Middx, UK
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Abstract

A series of low temperature CVD films of oxide (VAPOX and LTO) and nitride (PECVD ∝-SixNy:H) have been compared and optimised for use as gate dielectrics for TFT on insulator technology. The method of investigation involves the fabrication of MIS capacitor structures using the deposited insulator on single crystal n+ Si. I-V and C-V analyses yield information of the interested electronic stability parameters which are compared for the various insulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 459
Copyright
Copyright © Materials Research Society 1986

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References

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