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Low Temperature Formation of β-SiC by C60Deposition on Silicon

Published online by Cambridge University Press:  15 February 2011

S. Henke ,
B. Rauschenbach  and
B. Stritzker
S. Henke
Affiliation:
Institut für Physik, Universität Augsburg, D–86135 Augsburg, Germany
B. Rauschenbach
Affiliation:
Institut für Physik, Universität Augsburg, D–86135 Augsburg, Germany
B. Stritzker
Affiliation:
Institut für Physik, Universität Augsburg, D–86135 Augsburg, Germany
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Abstract

By deposition of C60 on silicon at moderate temperatures (800°C … 900°C) the formation of thin epitaxial β-SiC-films on Si could be proved. C60 -molecules were deposited onto Si(001) and Si(111) in high-vacuum at constant deposition rates for some hours. The thickness and the composition of the formed layers are determined by Rutherford-Backscattering (RBS). The thickness of the layers varied between about 50nm and 200nm in dependence of the deposition parameters. From the shape of the RBS-spectra only β-SiC can be identified. SiC-grains with a mean size of about 500 nm have been observed by atomic force microscopy (AFM). X-ray diffraction (XRD) pole figure measurements demonstrate the heteroepitaxial growth of β-SiC on Si It can be shown by XRD that only the cubic structure (β-SiC) of the different polytypes of SiC was formed during the carbonization process. The formation of growth defects (twins) can be observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 359: Symposium G – Science and Technology of Fullerene Materials , 1994 , 405
Copyright
Copyright © Materials Research Society 1995

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References

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