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Low Temperature Fabrication of (Ba, Sr)TiO3 Thin Films by ECR Plasma CVD

Published online by Cambridge University Press:  10 February 2011

Y. Kato ,
H. Yabuta ,
S. Sone ,
H. Yamaguchi ,
T. Iizuka ,
S. Yamamichi ,
P-Y. Lesaicherre ,
S. Nishimoto  and
M. Yoshida
Y. Kato
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, [email protected]
H. Yabuta
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, [email protected]
S. Sone
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, [email protected]
H. Yamaguchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
T. Iizuka
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
S. Yamamichi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
P-Y. Lesaicherre
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
S. Nishimoto
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
M. Yoshida
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, [email protected]
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Abstract

Physical and electrical properties are investigated for (Ba, Sr)TiO3 (BST) films prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) at relatively low temperatures, between 450 °C and 500 °C. The crystallinity of BST, estimated by X-ray diffraction and from the grain size, is greatly improved when the temperature is raised from 450 °C to 500 °C. Also better crystallinity is obtained for films grown at a deposition rate of 1.1 nn/min than at 2.7 nm/min. The mass transport rates of metal organic sources under our deposition conditions are estimated. The BST film composition is precisely controlled using the results of the investigation on mass transport. At near stoichiometric composition, i.e., (Ba+Sr)/Ti=0.97, and Ba/(Ba+Sr)=0.4, the films grown at 500 °C are found to have the largest dielectric constant, measured using flat capacitors with Pt bottom electrodes. A dielectric constant of 160 is obtained for 27 nm thick films grown at 500 °C and at 1.1 nm/min, without post-deposition annealing. These films exhibit the smallest SiO2 equivalent thickness of 0.65 nm and a leakage current density of 4.6x10−7 A/cm2 at plus IV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 3
Copyright
Copyright © Materials Research Society 1996

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References

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