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Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Mahdi Farrokh Baroughi ,
Hassan G. El-Gohary ,
Cherry Y. Cheng  and
Siva Sivoththaman
Mahdi Farrokh Baroughi
Affiliation:
[email protected], South Dakota State University, Electrical Engineering and Computer Science Department, 201 Harding Hall, Box 2220, South Dakota State University, Brookings, SD, 57007, United States, 605-688-6963, 605-688-4401
Hassan G. El-Gohary
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Cherry Y. Cheng
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Siva Sivoththaman
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
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Abstract

Highly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

Keywords

Siepitaxyelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A06-19
Copyright
Copyright © Materials Research Society 2007

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