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Low Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide Using Metal-organic Precursors

Published online by Cambridge University Press:  17 March 2011

Theodosia Gougousi  and
Zhiying Chen
Theodosia Gougousi
Affiliation:
Physics, UMBC, 1000 Hilltop Circle, Baltimore, MD, 21250
Zhiying Chen
Affiliation:
Physics, UMBC, 1000 Hilltop Circle, Baltimore, MD, 21250
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Abstract

A novel chemical route in thin film formation that includes the use of inorganic and organic peroxides and metal organic complexes soluble in supercritical carbon dioxide has been investigated for the deposition of alumina, titania and zirconia thin films at low temperatures (<150°C). The metal organic precursors used include: Al(acac)3, OTi(tmhd)2, and Zr(acac)4. Tert-butyl peroxide, and a 30% aqueous solution of hydrogen peroxide were used as oxidants. Depositions were carried out in a 25 ml hot wall reactor at pressures ranging from 2100 to 3900 psi at 80-140°C. The deposited thin films were investigated by using X-ray photoelectron spectroscopy (XPS) and transmission Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results indicate the formation of metal oxides thin films with some bonded carbon. The deposition temperatures achieved in this process are substantially lower than those used in conventional vacuum deposition techniques making feasible the deposition on temperature sensitive substrates and organic materials required for the development of hybrid organic/inorganic devices. Processing at low temperatures in supercritical carbon dioxide may provide the basis for the development of an alternative, environmentally friendly, thin film deposition technique for the processing of nanostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1007: Symposium S – Organic/Inorganic Hybrid Materials-2007 , 2007 , 1007-S04-41
Copyright
Copyright © Materials Research Society 2007

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