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Low Temperature CVD of Ru from C6H8Ru(CO)3

Published online by Cambridge University Press:  01 February 2011

Teresa S Lazarz ,
Yu Yang ,
Navneet Kumar ,
Do Young Kim ,
Wontae Noh ,
Gregory S Girolami  and
John R Abelson
Teresa S Lazarz
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana IL 61801, United States
Yu Yang
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Navneet Kumar
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Do Young Kim
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
Wontae Noh
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
Gregory S Girolami
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
John R Abelson
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
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Abstract

Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.

Keywords

Ruchemical vapor deposition (CVD) (deposition)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B09-06
Copyright
Copyright © Materials Research Society 2007

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References

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