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Low Temperature Chemical Vapor Deposition of Titanium Dioxide Thin Films Using Tetranitratotitanium (IV)

Published online by Cambridge University Press:  10 February 2011

D. C. Gilmer ,
W. L. Gladfelter ,
D. G. Colombo ,
C. J. Taylor ,
J. Roberts ,
S. A. Campbell ,
H.-S. Kim ,
G. D. Wilk  and
M. A. Gribelyuk
D. C. Gilmer
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
W. L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
D. G. Colombo
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
C. J. Taylor
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
J. Roberts
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
S. A. Campbell
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
H.-S. Kim
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
G. D. Wilk
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
M. A. Gribelyuk
Affiliation:
Texas Instruments, 13588 N. Central Expressway, Dallas, TX 75243
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Abstract

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184°C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 – 500°C with a precursor vessel temperature at 22°C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 – 30 and leakage current densities as low as 10−8 Amp/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 45
Copyright
Copyright © Materials Research Society 1998

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References

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