Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-05T10:23:05.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Pressure MOVPE Photo-Assisted Growth of ZnxCd1-xS

Published online by Cambridge University Press:  22 February 2011

Hervé Dumont ,
Shizuo Fujita  and
Shigeo Fujita
Hervé Dumont
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
Shizuo Fujita
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
Shigeo Fujita
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
Get access

Abstract

We will report the photo-assisted heteroepitaxial growth of Znx Cdl-xS by Metalorganic Vapor Phase Epitaxy (MOVPE). Sources materials were diethylzinc, dimethylcadmium and tertiaributylmercarptan. We have studied the effect of light intensity on the change of the Zn composition, crystalline quality and optical properties of epitaxial layers grown on (100) GaAs substrates. The Zn composition of the films could be increased by ≃ 15% by illuminating layers during the growth at 400°C. Concerning the characterization of epilayers, we observed a bright luminescence peak at E = 2.80 eV for x≃ 0.4. Epilayers with the best crystalline quality we could grown exhibited a full width at half maximum of ≃ 70 arsec by x-ray diffraction rocking curves when grown at 380°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 509
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Haase, M.A., Qiu, J., DePuydt, J.M. and Cheng, H., Appl. Phys. Lett. 59, 1272 (1991).Google Scholar
[2] Yamaga, S., Yoshikawa, A. and Kasai, H., J. Crystal Growth 99, 432 (1990).Google Scholar
[3] Fujita, Sz., Matsumoto, S. and Fujita, Sg., J. Electon. Mater. 22, 521 (1993).Google Scholar
[4] Fujita, Sz. and Fujita, Sg., J. Crystal Growth 117, 67 (1992).Google Scholar
[5] Dumont, H., Bourée, J.E, Marbeuf, A. and Gorochov, O., J. Crystal Growth 130, 600 (1992).Google Scholar
[6] Nishimura, K., Sakai, K., Nagao, Y. and Ezaki, T., J. Crystal Growth 117, 119 (1992).Google Scholar
[7] Suslina, L.G., Fedorov, D. L., Areshkin, A.G. and Melekhin, V.G., Sol. Stat. Com. 55, 345 (1985).Google Scholar
[8] Zimmermann, R., J. Crystal Growth 101, 346 (1990).Google Scholar
[9] Halsted, R.E., in Physics and Chemistry of II-VI Compounds, edited by Aven, M. and Prener, J.S. (North Holland, Amsterdam, 1967), p.390.Google Scholar