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Low Permittivity SiO2/Void Nanocomposite Films

Published online by Cambridge University Press:  25 February 2011

Amitabh Das ,
R. Messier ,
T. R. Gururaja  and
L. E. Cross
Amitabh Das
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
T. R. Gururaja
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L. E. Cross
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

A novel approach for preparing porous SiO2 thin films by sputter deposi-tion is being developed. The porosity is introduced to reduce the dielectric permittivity of the film to less than 3 for potential use in packaging high speed VLSIs. In the first approach, amorphous silicon is initially deposited to produce a columnar structure with a thickness of 25μm, followed by etching and thermal oxidation to result in closely spaced SiO2 pillars. Capping the structure by a thin film (0.1μm), silica gel layer provides the support for strip line traces. In the second approach, porous SiO2 films are prepared by reactive sputtering. The dielectric properties of the sputter deposited SiO2 films are presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 27
Copyright
Copyright © Materials Research Society 1986

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References

1. Blodgett, A.J. Jr., Scientific American, Sept. 1983, p. 86–97.Google Scholar
2. Personal communications with Gilbert, B..Google Scholar
3. Pratt, I.H., Solid State Technology, December 1969, p. 49–57.Google Scholar
4. Gilbert, L.R., et al., Thin Solid Films, 54 (1978), 149–157.Google Scholar
5. Messier, R., et al., J. Appl. Phys., 51 (3), March 1980, p. 1611–1614 CrossRefGoogle Scholar
6. Deal, and Grove, , Jpn. J. Appl. Phys., 36, (1965), p. 3370.Google Scholar
7. Katz, L.E., Chapter 4 in VLSI Technology, Edited by Sze, S.M., McGraw-Hill Publishing Co. (1983).Google Scholar
8. Pliskin, W.A., J. Vac. Sci. Technol. 14 (5) (Sept./Oct., 1977).Google Scholar
9. Valetta, R.M., et al., Electrochem. Technol. 4 (1966), p. 402–406.Google Scholar
10. Girn, A.P., Ph.D. Thesis (1984), “Non-Uniform Physical Structure Model for Understanding the Electrochromic Behavior of Tungsten Oxide Thin Films,” The Pennsylvania State University, University Park, Pa.Google Scholar
11. Sumio, Sakka, Treatise on Materials Science and Technology, Vol.22, (1982), p. 129–167.Google Scholar