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Low K Sog Etchback and Teos Oxide Capping

Published online by Cambridge University Press:  15 February 2011

K.G. Huang ,
D. Cheung ,
D. Nguyen  and
L. Forester
K.G. Huang
Affiliation:
Applied Materials, Inc., M/S 1266, 3225 Oakmead Village Drive, Santa Clara, CA 95054
D. Cheung
Affiliation:
Applied Materials, Inc., M/S 1266, 3225 Oakmead Village Drive, Santa Clara, CA 95054
D. Nguyen
Affiliation:
Allied Signal, Inc., Advanced Microelectronic Materials, 3500 Garrett Drive, Santa Clara, CA 95054
L. Forester
Affiliation:
Allied Signal, Inc., Advanced Microelectronic Materials, 3500 Garrett Drive, Santa Clara, CA 95054
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Abstract

SOG etchback was studied using Applied Materials' 200mm MxP+ etch chamber on Allied Signal's SOG (spin-on-glass) T11 and low κ SOP (spin-on-polymer) 418 together with liner films of PE-oxide and oxynitride for IMD (inter-metal dielectric) planarization. Excellent chamber performance and wide process window were demonstrated. Etch selectivities between various SOG and liner films are tunable in a wide range allowing optimization of IMD planarization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 45
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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