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Low Energy Electron Microscopy of Surface Processes on Clean Si(111) and Si (100)

Published online by Cambridge University Press:  25 February 2011

E. Bauer ,
M. Mundschau ,
W. Swiech  and
W. Telieps
E. Bauer
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
M. Mundschau
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
W. Swiech
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
W. Telieps
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
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Abstract

Low energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 225
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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