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Low Dislocation-Density and Vacancy-Rich Glassy-Pinning Quasi GaAs Crystal by Liquid-Encapsulated Czochralski Growth

Published online by Cambridge University Press:  22 February 2011

Yasutuki Saito  and
Takashi Fujii
Yasutuki Saito
Affiliation:
Microelectronics Ctr. Tamagawa Works, Toshiba Corp. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Takashi Fujii
Affiliation:
R&D Ctr.Toshiba Corp.1, Komukai Toshiba-cho, Saiwai-ku,Kawasaki 210, Japan
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Abstract

Not all threshold voltage (Vth) scattering of Si-implanted metal-semiconductor field- effect- transistors (MESFETs) on low dislocation density and semi-insulating (S.I.) liquid- glass encapsulation Czochralski (LEC) GaAs crystals grown at relatively high pull-speed were small. By comparison with the Lang x-ray topographs of the wafers, it was found that x-ray topograph contrast variations reflected on the films did not correspond with Vth variations of the wafers at all. Especially, in low dislocation density regions, which are in white regions on the films of the x-ray topographs, very large Vth turbulences were observed. We believe that dislocation-less in LEC GaAs crystals causes large Vth turbulences of Si-implanted MESFETs and that frozen cell-lattice-structure large turbulences by pinning centers associated with vacancies like glass cause large Vth turbulences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 531
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Nanishi, Y., Yamazaki, H., Mizutani, T., and Miyazawa, S., Int. Symposium on GaAs and Related Compounds, Ins. Phys.Conf.Ser. No.63, 1982 ed. by Sugano, T. (Oiso, Japan, 1981) pp. 7–12.Google Scholar
[2] Miyazawa, S., Ishii, Y., Ishida, S., and Nanishi, Y., Appl.Phys.Lett. 43, 853(1983).Google Scholar
[3] Winston, H.V., Hunter, A.T., Olsen, H.M., Bryan, R.P. and Lee, R.E., Appl.Phys.Lett. 45, 474(1984).Google Scholar
[4] Saito, Y., Hirose, M., Fukuda, K., Yasuami, S., lkawa, Y., and Hojo, A., Toshiba R&D report RM23764 (1984).Google Scholar
[5] Saito, Y., Hirose, M. and Ikawa, Y., submitted to The Fifth International Conference on Defect Recognition and Image Processing in Semiconductors and Devices.Google Scholar
[6] Yasuami, S., unpublished.Google Scholar
[7] Saito, Y., Fukuda, K. and Yasuami, S., in the Extended Abstracts(The 52nd Autumn Meeting, 1991), lOa-SY-29, p.266 (JSAP Cat.Num.AP-911125-01).Google Scholar
[8] Saito, Y., presented at Tenth International Conference on Crystal Growth (ICCG-10)(Session 3C in Palomar Room of Sheraton Harbor Island Hotel, Aug.18, 1992, San Diego, Cal.U.S.A), in the Oral Abstracts, p.69, in the submitted paper as a proceedings of ICCG-10 (#C29).Google Scholar
[9] Saito, Y., J.Appl.Phys. 72, 5451 (1992).Google Scholar
[10] Saito, Y., submitted to J.Cryst.Growth.Google Scholar
[11] Fujii, T., unpublished.Google Scholar
[12] Saito, Y., unpublished.Google Scholar
[13] Salto, Y., J.Appl.Phys. 71, 3544(1992).Google Scholar
[14] Yasuami, S., unpublished.Google Scholar
[15] Yasuami, S., Fukuda, K., Saito, Y. and Hojo, A., unpublished.Google Scholar
[16] Saito, Y., Fukuda, K., Yasuami, S., Fujii, T. and Watanabe, M., unpublished.Google Scholar
[17] Saito, Y., Fukuda, K., Yasuami, S., Fujii, T. and Watanabe, M., in the Extended Abstracts(The 52nd Autumn Meeting, 1991); The Japan Society of Applied Physics, 10a-SY-31, p.267 (JSAP Cat.Num. AP-911125-01).Google Scholar
[18] Saito, Y., Fukuda, K., Yasuami, S., Fujii, T. and Watanabe, M., J.Mater.Res. in press.Google Scholar
[19] Fukuda, K., unpublished.Google Scholar
[20] Saito, Y., ibid.Google Scholar
[21] Lang, A.R., Acta Crystallogr. 12, 249 (1959).Google Scholar
[22] Yasuami, S., Mikami, H. and Hojo, A., Jpn.J.Appl.Phys. 22,1567 (1983).Google Scholar
[23] Yasuami, S., unpublished.Google Scholar
[24] Yasuami, S., unpublished.Google Scholar
[25] Saito, Y., Appendix of Ref.[18].Google Scholar
[26] Saito, Y., J.Appl.Phys. 65, 846(1989).(Erratum)66,2232(1989).Google Scholar
[27] Saito, Y., Fukuda, K., Nozaki, C., Yasuami, S., Nishio, J., Yashiro, S., Washizuka, S., Watanabe, M., Hirose, M., Y.Kitaura and Uchitomi, N., Jpn.J.Appl.Phys. 30, 2432 (1991).Google Scholar
[28] Otsuki, T., J.Appl.Phys. 61, 928 (1987).Google Scholar
[29] Saito, Y., presented at Ninth International Conference on Crystal Growth (ICCG-9)(General Session 10: Characterization Techniques 1, Aug.22, 1989, Sendal, Japan), in the Abstracts, 22pE15, p.196.Google Scholar
[30] Saito, Y., J.Appl.Phys. 68, 830(1990).Google Scholar
[31] Saito, Y., in the Extended Abstracts (The 53rd Autumn Meeting, 1992); The Japan Society of Applied Physics, 18p-ZH-17, p.318 (JSAP Cat.Num.AP921124-01).Google Scholar
[32] Blakemore, J.S., J.Appl.Phys. 53, R123 (1982).Google Scholar
[33] Sze, S.M., Physics of Semiconductor Devices, 2nd ed.(Wiley, New York, 1981), p. 851.Google Scholar
[34] Saito, Y., unpublished.Google Scholar
[35] Akimichi Hojo, his grumbling of “Glass”.Google Scholar
[36] Saito, Y., in MRS proceedings series Vol.262 ed. by Ashok, S., Chevaliier, J., Sumino, K., and Weber, E., pp.719–723.Google Scholar