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Low Damage Nitridation of Silicon Oxide Surfaces By Remote-Plasma-Excited Nitrogen

Published online by Cambridge University Press:  10 February 2011

Yoji Saito  and
Ukyo Mori
Yoji Saito
Affiliation:
Department of Electrical Eng. & Elec., Seikei University, Musashino, Tokyo 180-8633, Japan, [email protected] Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, [email protected]
Ukyo Mori
Affiliation:
Department of Electrical Eng. & Elec., Seikei University, Musashino, Tokyo 180-8633, Japan, [email protected]
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Abstract

We incorporated significant density of nitrogen only near the top surfaces of the thermally grown oxides by the fluorination at room temperature followed by atomic nitrogen treatment around 550°C. Average nitrogen concentration of more than 6 percent was obtained in the nitrided layer with thickness below 1 nm. We fabricated MOS devices using the nitrided oxide films without hydrogenation, and measured capacitance-voltage characteristics. The density of nitridation-induced interface defects in the MOS device was estimated to be below 2×1010 cm−2. The proposed technique identifies a unique process for obtaining high quality ultrathin dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 33
Copyright
Copyright © Materials Research Society 1999

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References

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