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Low Contact Resistivity Mn/Au/Ti/Pd/Au P-Ohmic Contacts for HBTs

Published online by Cambridge University Press:  22 February 2011

B. Vetanen ,
C. Haynes ,
S.J. Prasad ,
I. Beers  and
S. Park
B. Vetanen
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
C. Haynes
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
S.J. Prasad
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
I. Beers
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
S. Park
Affiliation:
Electronics Research Labs Tektronix, MS 50-223 Beaverton, OR 97077
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Abstract

Obtaining good p-ohmics to the base layers of AlGaAs/GaAs HBTs have been difficult due to metal spiking and instability of the contacts to subsequent processing temperatures. To avoid spiking, non-alloyed contacts have been traditionally used. In this paper, we present a stable, non-spiking, low contact resistivity alloyed p-ohmic contact to HBT structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 243
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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