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Longitudinal Modes in InAlGaAs/AlGaAs High-Power Laser Diodes

Published online by Cambridge University Press:  26 February 2011

B. S. Passmore ,
Y. C. Chua ,
M. O. Manasreh  and
J. W. Tomm
B. S. Passmore
Affiliation:
Department of Electrical Engineering and Microelectronics and Photonics Program, University of Arkansas, Fayetteville, AR 72701
Y. C. Chua
Affiliation:
Department of Electrical Engineering and Microelectronics and Photonics Program, University of Arkansas, Fayetteville, AR 72701
M. O. Manasreh
Affiliation:
Department of Electrical Engineering and Microelectronics and Photonics Program, University of Arkansas, Fayetteville, AR 72701
J. W. Tomm
Affiliation:
Max-Born-Institute Berlin, Max-Born St. 2A, Berlin, Germany 12489
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Abstract

The emission from bias voltage driven In0.06Al0.08Ga0.86As/Al0.3Ga0.7As edge-emitting diode lasers with cavity lengths of 0.6 and 0.9 mm was measured at 290 K using a high resolution Fourier-transform infrared spectrometer. The light-current (L-I) characteristic curves showed that a threshold current of ∼ 0.5 and 0.8 A was needed to reach the stimulated emission in laser diodes with cavity lengths of 0.6 and 0.9 mm, respectively. The laser diode longitudinal modes were observed in the stimulated emission spectrum for each of the devices. These spectra enabled us to calculate the refractive index, total loss, and gain of the active region. On the other hand, the cavity length was determined by utilizing the interferogram spectrum, longitudinal modes spacing, and direct measurements of the laser dimensions. A good agreement between the cavity length values obtained from the three methods was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.8
Copyright
Copyright © Materials Research Society 2005

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References

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