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Local Structure and Er3+ Emission from Pseudo-Amorphous GaN:Er Thin Films

Published online by Cambridge University Press:  09 August 2011

S. B. Aldabergenova ,
M. Albrecht ,
A. A. Andreev ,
C. Inglefield ,
J. Viner ,
P. C. Taylor  and
H. P. Strunk
S. B. Aldabergenova
Affiliation:
Institut für Werkstoffwissenschaften, Universität Erlangen-Nürnberg, Cauerstr.6 91058 Erlangen, Germany
M. Albrecht
Affiliation:
Institut für Werkstoffwissenschaften, Universität Erlangen-Nürnberg, Cauerstr.6 91058 Erlangen, Germany
A. A. Andreev
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.-Petersburg 194021, Russia
C. Inglefield
Affiliation:
University of Utah, Salt Lake City, UT 84112, USA
J. Viner
Affiliation:
University of Utah, Salt Lake City, UT 84112, USA
P. C. Taylor
Affiliation:
University of Utah, Salt Lake City, UT 84112, USA
H. P. Strunk
Affiliation:
Institut für Werkstoffwissenschaften, Universität Erlangen-Nürnberg, Cauerstr.6 91058 Erlangen, Germany
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Abstract

We report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15/2 transitions is greatly enhanced after annealing at 750°C. In this material GaN crystallites have formed and embedded in the continuous amorphous matrix. The crystallites are 4 to 7 nm in diameter as analyzed by high resolution transmission electron microscopy. The absorption edge, extending three orders of magnitude in absorption coefficient in the spectral range from 0.5 to 3.5 eV, is superimposed on resonant absorption bands of Er3+ ions.The total photoluminescence spectrum consists of welldefined Er3+ luminescence peaks imposed on a broad band edge luminescence from the amorphous GaN host matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 81
Copyright
Copyright © Materials Research Society 1999

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