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Local Stress-strain Structure in CVD Diamond Observed by Raman Peak-shift Mapping

Published online by Cambridge University Press:  02 March 2011

Yukako Kato ,
Hitoshi Umezawa ,
Tokuyuki Teraji  and
Shin-ichi Shikata
Yukako Kato
Affiliation:
Diamond Research Laboratory, Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
Hitoshi Umezawa
Affiliation:
Diamond Research Laboratory, Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
Tokuyuki Teraji
Affiliation:
National Institute for Material Science, Tsukuba 305-0047, Japan
Shin-ichi Shikata
Affiliation:
Diamond Research Laboratory, Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
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Abstract

Semiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered; however, the information on the local stress-strain distribution in a single crystal is not sufficient. In this paper, the local stress-strain distribution of the epitaxial CVD single crystal diamond is quantitatively examined using the birefringence and cathodoluminescence images and the Raman peak-shift map. From the Raman peak-shift map, the local stress-strain is estimated and the stress is found to range from -67 MPa to +160 MPa in the observed area.

Keywords

diamonddislocationsRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a04-04
Copyright
Copyright © Materials Research Society 2011

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References

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