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Local Modification of Microstructure and of Properties by FIB-CVD

Published online by Cambridge University Press:  01 February 2011

H. Wanzenboeck ,
S. Harasek ,
H. Langfischer ,
B. Basnar ,
W. Brezna ,
J. Smoliner  and
E. Bertagnolli
H. Wanzenboeck
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
S. Harasek
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
H. Langfischer
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
B. Basnar
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
W. Brezna
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
J. Smoliner
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
E. Bertagnolli
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7/1 – 1040 Vienna
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Abstract

The focused ion beam has been acknowledged as a versatile tool for local sputtering as well as local deposition of material. A beam diameter below 10 nm is feasible and renders FIB a powerful tool for microstructure fabrication and generation. This experimental study investigates the geometrical limitations of FIB processing as well as the implications on the processed material. The high energetic ions of the primary beam also change the properties of the processed material due to implantation and atomic mixing. The incorporation of Ga from the FIB may be beneficial in the case of deliberate implantation or unfavorable as a chemical impurity. Higher doses of ion irradiation caused amorphisation of the material. The effects of FIB processing on the substrates as well as deposited structures are illustrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.33
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Melngailis, J., Proceedings of the SPIE The International Society for Optical Engineering, 1465, 36 (1991)Google Scholar
[2] Chu, C.H., Hsieh, Y.F., Harriott, L.R., Wade, H.H., J. Vac. Sci. Technol. B. 9(6), 3451 (1991)Google Scholar
[3] Prewett, P.D., Eastwood, A.W., Turner, G.S., Watson, J.G., Microelectronic Engineering, 21(1–4), 191 (1993)Google Scholar
[4] Lehrer, C., Frey, L., Petersen, S., and Ryssel, H., J. Vac. Sci. Technol. B 19(6), 2532 (2001)Google Scholar
[5] Ziegler, J.F., Biersack, J.P., SRIM Monte-Carlo simulation software of stopping and range of ions in matter, www.srim.org Google Scholar
[6] Langfischer, H., Bertagnolli, E., submitted to Appl. Phys. Lett. 2002 Google Scholar
[7] Arora, B.M., Castillo, J.M., Kurup, M.B., Sharma, R.P., Journal of Electronic Materials 10(5), 845 (1981).Google Scholar