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The Local Atomic Arrangement in Amorphous Sixc1−x:H By Electron Energy Loss Spectroscopy and Electron Diffraction
Published online by Cambridge University Press: 25 February 2011
Abstract
We have used electron energy loss spectroscopy (EELS) and electron diffraction to study the local atomic arrangement in amorphous SixC1−x:H in the composition range 0.37 < × < 1. In the thin films, which were pre-pared by radio-frequency glow discharge from a mixture of methane and sil-ane, the π at the K-edge of C does not show up even for the highest C-content, i.e., Si0.37C0.63, consistent with fourfold coordinated C in the whole composition range studied. Also the electron diffraction results suggest a tetrahedral network. Models where the minority element is sur-rounded by four atoms of the majority element, fit the experimental data better than models based on a random distribution of Si and C on the tetra-hedral network.
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