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Loading Effects During Low-Temperature Seg Of Si And SiGe

Published online by Cambridge University Press:  10 February 2011

W. B. De Boer ,
D. Terpstra  and
R. Dekker
W. B. De Boer
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
D. Terpstra
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
R. Dekker
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

Selective Epitaxial Growth (SEG) of Si and SiGe suffers from pattern sensitivity. The growth rate and layer composition change with the pattern and the window size. In relation to growth at atmospheric pressure, the sensitivity to the window size is suppressed at reduced pressure, whereas some growth rate effects of a more global nature become more visible. The Si growth rate decreases when the area of exposed silicon on the wafer and the susceptor decreases. SiGe shows the opposite behavior: its growth rate increases with decreasing silicon area. Another difference between Si and SiGe is the range over which the loading effects are active. The influence of a large silicon area on the Si growth rate can be felt inches away, whereas the SiGe growth rate is affected over a much shorter distance. In common epi reactors the wafer rests on a susceptor, which extends beyond the wafer, exposing a large Si-coated surface area around the circumference of the wafer. Consequently, the Si growth rate varies unacceptably across the wafer. A sacrificial polysilicon layer has been successfully applied to improve the growth rate uniformity across the wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 315
Copyright
Copyright © Materials Research Society 1998

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References

1. Pruijmboom, A., Terpstra, D., Timmering, C. E., de Boer, W. B., Theunissen, M. J. J., Slotboom, J. W., Hueting, R. J. E. and Hageraats, J. J. E. M., IEEE IEDM95 Technical Digest, 747 (1995).Google Scholar
2. Meister, T.F., Schifer, H., Franosch, M., Molzer, W., Aufinger, K., Schler, U., Walz, C., Stolz, M., Boguth, S. and Böck, J., IEEE IEDM95 Technical Digest, 739 (1995).Google Scholar
3. D.Terpstra, de Boer, W.B. and Slotboom, J.W., Solid State El. 41, 1493 (1997).Google Scholar
4. Washio, K., Ohue, E., Oda, K., Tanabe, M., Shimamoto, H. and Onai, T., IEEE IEDM97 Technical Digest, 745 (1997).Google Scholar
5. Kamins, T. I., J. Appl. Phys. 74, 5799 (1993).Google Scholar
6. Drowly, C. I. and Hammond, M. L., Solid State Technol. 33,135 (1990).Google Scholar
7. Ito, S., Nakamura, T. and Nishikawa, S., J. Appl. Phys. 78, 2716 (1995).Google Scholar