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Liquid Phase Epitaxial Growth of Semi-Insulating Aigalnas by Fe Doping
Published online by Cambridge University Press: 26 February 2011
Abstract
Fe-doped semi-insulating AlGalnAs grown by liquid phase epitaxy has been studied and compared to Fe-doped GalnAsP. It has been found that semiinsulating AlGalnAs is easier to obtain than semi-insulating GalnAsP, because of its high iron distribution coeficient. The high resistivity of 1×109 ohm-cm has been obtained for Al0.481n0.52 As grown at 750°C. The activation energy of the Fe acceptor level in the AlGalnAs system has also been studied.
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