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Liquid Phase Diffusion Bonding for Thermoelectric Material Pb-Sn-Te

Published online by Cambridge University Press:  10 February 2011

Y. Shinohara ,
M. Hashimoto ,
Y. Imai ,
Y. Isoda  and
I. A. Nishida
Y. Shinohara
Affiliation:
4th Research Group, National Research Institute fore Metals, 1-2-1, Sengen, Tsukuba-shi 305–0047, Japan
M. Hashimoto
Affiliation:
Graduate School of Science and Technology, Niigata University, 8050, Igarashi-ni-cho, Niigata-shi, Niigata 950–2181, Japan
Y. Imai
Affiliation:
4th Research Group, National Research Institute fore Metals, 1-2-1, Sengen, Tsukuba-shi 305–0047, Japan
Y. Isoda
Affiliation:
4th Research Group, National Research Institute fore Metals, 1-2-1, Sengen, Tsukuba-shi 305–0047, Japan
I. A. Nishida
Affiliation:
4th Research Group, National Research Institute fore Metals, 1-2-1, Sengen, Tsukuba-shi 305–0047, Japan
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Abstract

Liquid phase diffusion bonding was applied to the development of the joined thermoelectric material Pb-Sn-Te, which was expected to be superior to the monolithic Pb-Sn-Te. A Sn sheet 50μm thick was used for the inserted material. The sheet was sandwiched between Pb-Sn-Te segments with different hole concentrations, and subsequently the bonding was performed under 2MPa at 700K for 15min in Ar. The Sn sheet was changed to a SnTe interfacial layer of less than 10μm in thickness. The interfacial layer showed high toughness, and good ohmic and thermal contact up to 550K. Liquid phase diffusion bonding was an excellent technique for joining of thermoelectric material Pb-Sn-Te.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 586: Symposium M – Interfacial Engineering for Optimized Properties II , 1999 , 111
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Rowe, D.M. and Bhandari, C.M., Modern Thermoelectrics, Holt, Rinehart&Winston Ltd.,London, 1983, pp. 113.Google Scholar
2. Hall, W.C. in CRC Handbook of THERAJOELECTRICS, edited by Rowe, D.M., CRC Press Inc.,New York, 1994, pp.503 Google Scholar
3. Machonis, A.A. and Cadoff, I.B., Trans.Metall. Soc.AIME 230, p.333(1964).Google Scholar
4. Shinohara, Y., Imai, Y., Isoda, Y., Nishida, I.A., Kaibe, H.T. and Shiota, I., Proc. 16th Int.Cof Thermoelectrics(ICT), Dresden, p.384(1997).Google Scholar
5. Shiota, I. and Nishida, I.A., Proc. 16th ICT, Dresden, p. 364(1997).Google Scholar
5. Shiota, I. and Nishida, I.A., Proc. 16th ICT, Dresden, p. 364(1997).Google Scholar
6. The Japan Welding Society ed., Handbook of Welding and Joining(in Japanese), Maruzen,Tokyo, 1990, pp. 475 Google Scholar
7. Harman, T.C., Semiconductor Products, Sep., p.13(1963).Google Scholar
8. Massalski, T.B. ed., Binary Alloy Phase Diagrams, ASMI, USA, Vol.3, 1990, p. 3401.Google Scholar