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Liquid Delivery CVD of Ferroelectric (Pb,La)(Zr,Ti)O3 Thin Films

Published online by Cambridge University Press:  15 February 2011

W. Tao ,
S.B. Desu ,
C.H. Peng ,
B. Dickerson ,
T.K. Li ,
C.L. Thio ,
J.J. Lee  and
W. Hendricks
W. Tao
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
S.B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
C.H. Peng
Affiliation:
CERAM-Virginia Inc., Blacksburg, VA 24060
B. Dickerson
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
T.K. Li
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
C.L. Thio
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
J.J. Lee
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
W. Hendricks
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
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Abstract

High quality lanthanum doped PZT films were deposited on platinum coated silicon wafers by direct liquid injection MOCVD using lead bis-tetramethylheptadione, lanthanum tri-tetramethylheptadione, zirconium tetramethylheptadione, and titanium ethoxide as precursors. The films were deposited at 650°C and a reduced pressure of 5 Torr. The deposition rates were higher than 10 nm/min. The liquid delivery system led to highly reproducible deposition rate, composition, and ferroelectric properties in the PLZT films. The remanent polarization of the films decreased from about 25 μC/cm2 for PLZT(0/55/45) to about 12 μC/cm2 for PLZT(8/55/45). The coercive field of the films seemed to be independent on the La doping concentration up to 8% La doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 319
Copyright
Copyright © Materials Research Society 1995

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References

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