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Links Between Etching Grooves Of Partial Dislocations And Their Characteristics Determined By TEM In 4H SiC

Published online by Cambridge University Press:  01 February 2011

Jean-Pierre Ayoub ,
Michael Texier ,
Gabrielle Regula ,
Bernard Pichaud  and
Maryse Lancin
Jean-Pierre Ayoub
Affiliation:
[email protected], IM2NP, CNRS, Aix-Marseille Université, av. Escadrille Normandie Niemen, Marseille, 13397, France
Michael Texier
Affiliation:
[email protected], IM2NP, CNRS, Aix-Marseille Université, av. Escadrille Normandie Niemen, Marseille, 13397, France
Gabrielle Regula
Affiliation:
[email protected], IM2NP, CNRS, Aix-Marseille Université, av. Escadrille Normandie Niemen, Marseille, 13397, France
Bernard Pichaud
Affiliation:
[email protected], IM2NP, CNRS, Aix-Marseille Université, av. Escadrille Normandie Niemen, Marseille, 13397, France
Maryse Lancin
Affiliation:
[email protected], IM2NP, CNRS, Aix-Marseille Université, av. Escadrille Normandie Niemen, Marseille, 13397, France
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Abstract

We introduce defects into (1120) oriented highly N-doped 4H-SiC by surface scratching, bending and annealing in the brittle regime. Emerging defects at the sample surface are revealed by chemical etching of the deformed samples. The etch patterns are constituted of straight bulges and grooves exhibiting various topographical features. These etch figures correspond to the emergence of double stacking faults dragged by a pair of partial dislocations. In this paper, we discuss the links between the etch figure characteristics and the defect nature. Results obtained by optical and atomic force microscopy are completed by structural analysis of defects performed by transmission electron microscopy. Mobility of partial dislocations in 4H-SiC is discussed and correlated to their core composition and to the effect of the applied mechanical stress.

Keywords

defectstransmission electron microscopy (TEM)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D02-04
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Ning, X.J., Huvey, N., Pirouz, P., J. Am. Ceram. Soc., 80, (1997), p.1645.Google Scholar
2. Samant, A.V., Zhou, W.L., and Pirouz, P., Phys. Stat. Sol.(a), 166, (1998), p. 155.Google Scholar
3. Samant, A.V., Hong, M.H., Pirouz, P., Phys. Stat. Sol. (b), 222, (2000), p. 75.Google Scholar
4. Demenet, J.L., Hong, M.H. and Pirouz, P., Mat. Sci. Forum, 338-342, (2000), p. 517.Google Scholar
5. Pirouz, P., Demenet, J.L., Hong, M.H., Phil. Mag. A, 81, (2001), p. 1207.Google Scholar
6. Ning, X.J. and Pirouz, P., J. Mat. Res., 11, (1996), p. 884 Google Scholar
7. Pirouz, P. and Yang, J.W., Ultramicroscopy, 51, (1993), p. 189.Google Scholar
8. Chung, H. J., Liu, J. Q., Skowronski, M., App. Phys. Lett., 81, (2002), p. 3759.Google Scholar
9. Regula, G., Lancin, M., Idrissi, H., Pichaud, B., Douin, J., Phil. Mag. Lett., 85 (2005), p. 259.Google Scholar
10. Mussi, A., Rabier, J., Thilly, L., Demenet, J.L., Phys. Stat. Sol. (c), 4, (2007), p. 2929.Google Scholar
11. Idrissi, H., Regula, G., Lancin, M., Douin, J., Pichaud, B., Phys. Stat. Sol. (c), 2, (2005), p.1998.Google Scholar
12. Blumenau, A.T., Fall, C.J., Jones, R., Öberg, S., Frauenheim, T., Bridon, P.R., Phys. Rev. B, 68 (2003), p. 174108.Google Scholar
13. Savini, G., Heggie, M.I., Öberg, S., Faraday Discuss., 134, (2007), p. 353.Google Scholar
14. Idrissi, H., Pichaud, B., Regula, G., Lancin, M., J. Appl. Phys., 101 (2007), p. 113533.Google Scholar
15. Idrissi, H., Lancin, M., Regula, G., Pichaud, B., Mat. Sci. Forum, 457-460, (2004), p. 355.Google Scholar
16. Zhuang, D., Edgar, J.H., Mat. Sci. Eng. R, 48, (2005), p.1.Google Scholar
17. Texier, M., Regula, G., Lancin, M., Pichaud, B., Phil. Mag. Lett., 86 (2006), p. 529.Google Scholar
18. Texier, M., Regula, G., Lancin, M., Pichaud, B., Phil. Mag. Lett., 87 (2007), p. 135.Google Scholar
19. Brander, R.W., Boughey, A.L., Br. J. Appl. Phys., 18, (1967), p.905.Google Scholar
20. Katsuno, M., Ohtani, N., Takahashi, J., , HYashiro, Kanaya, M., Jpn. J. Appl. Phys., 38, (1999), p. 4661.Google Scholar
21.to be published.Google Scholar
22. Texier, M., Lancin, M., Regula, G., Pichaud, B., proc. MSM conference, Cambridge, UK, accepted to appear.Google Scholar