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Line-Source E-Beam Crystallization of Silicon-on-Insulator Films

Published online by Cambridge University Press:  22 February 2011

J. A. Knapp  and
S. T. Picraux
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, USA
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, USA
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Abstract

Silicon-on-insulator films have been formed using a 20 mm by 1 mm line-source electron beam, with sample sweep speeds of 100–500 cm/sec and peak beam power densities up to 75 kW/cm2. Films were formed over 1 and 2 μm thick SiO2 isolating layers on 4°C diameter Si<100> wafers, with stripe openings of 5 to 100 μ width for seeding the crystallization from the substrate. Films consisted of Si layers from 0.4 to 1.0 μm thickness, with a capping layer of 2 μm SiO2. By sweeping the beam parallel to the long axis of the seed openings, smooth, oriented films were obtained, with low-angle grain boundaries confined to midway between seed openings. Best results were obtained for ≲ 50 μm spacing between seed openings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 533
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

This work performed at Sandia National Laboratories supported by the US Department of Energy under contract number DE-AC04-76DP00789.

References

REFERENCES

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