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Line-Source E-Beam Crystallization of SI on Silicon Nitride Layers*

Published online by Cambridge University Press:  15 February 2011

J. A. Knapp ,
S. T. Picraux ,
K. Lee ,
J. F. Gibbons ,
T. O Sedgwick  and
S. W. Depp
J. A. Knapp
Affiliation:
Sandia National Laboratories†, Albuquerque, NM 87185,
S. T. Picraux
Affiliation:
Sandia National Laboratories†, Albuquerque, NM 87185,
K. Lee
Affiliation:
Stanford University, Stanford, CA 94305;
J. F. Gibbons
Affiliation:
Stanford University, Stanford, CA 94305;
T. O Sedgwick
Affiliation:
IBM Research Center, San Jose, CA 95193
S. W. Depp
Affiliation:
IBM Research Center, San Jose, CA 95193
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Abstract

We report the use of a swept line–source electron beam for liquid phase recrystallization of Si films on Si3N4 layers over Si substrates. For the case of 5000Å of Si on 1000Å of Si3N4 layers over Si Si3N4, we have demonstrated the growth of Si crystalline regions as large as 0.5 × 5 mm of predominately [100] orientation normal to the film and [010] in the sweep direction. The nucleation of grain growth for this case occurred at small defects in the nitride layer at the edge of the treated area, growing out as far as 500 μm over intact nitride. Thicker nitrides (2500Å) remained intact at power densities useful for treating the Si film. For this thicker nitride we demonstrate non–seeded growth for single and repetitively melted Si. In all cases the surface morphology of the regrown regions is suggestive of rapid growth along <100> directions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 511
Copyright
Copyright © Materials Research Society 1982

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Footnotes

†

A U. S. Department of Energy Facility

*

This work supported by the U. S. Department of Energy, DOE, under Contract number DE–AC04–76–DP00789

References

REFERENCES

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3. Secco d'Aragona, F., J. Electrochem. Soc. 119, 948 (1972).Google Scholar