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Limited Reaction Processing

Published online by Cambridge University Press:  28 February 2011

James F. Gibbons ,
C. M. Gronet ,
J. C. Sturm ,
C. King ,
K. Williams ,
S. Wilson ,
S. Reynolds ,
D. Vook ,
M. Scott  and
R. Hull
...Show all authors
James F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
C. M. Gronet
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. C. Sturm
Affiliation:
Princeton University, EE Department, Princeton, NJ 08544
C. King
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
K. Williams
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
S. Wilson
Affiliation:
Charles Evans & Associates, San Mateo, CA 94402
S. Reynolds
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
D. Vook
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
G. Reid
Affiliation:
Hewlett-Packard Materials Characterization Laboratory, Palo Alto, CA 94304
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Abstract

Limited reaction processing (LRP), a new technique which provides precise control of thermally driven surface reactions, was used to grow multilayer structures composed of semiconductors and insulators. Results are presented for group IV-based materials including epitaxial Si, SiGe alloys, SiO2, and polysilicon. III–V materials such as GaAs, AlGaAs, and InGaAs have also been successfully grown. A number of diagnostic techniques were used to define the advantages and capabilities of LRP, including TEM, SIMS and AES. In addition, some preliminary device results are presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 629
Copyright
Copyright © Materials Research Society 1987

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References

[11] Gibbons, J. F., Gronet, C. M. and Williams, K. E., Appl. Phys. Lett. 47, 721 (1985).Google Scholar
[2] Gronet, C. M., Sturm, J. C., Williams, K. E. and Gibbons, J. F., MRS Symposium on Rapid Thermal Processing, Boston, MA, Dec. 1985 (Materials Research Society, Pittsburgh, PA 1986), Vol.52, p. 305.Google Scholar
[3] Gronet, C. M., Sturm, J. C., Williams, K. E., Gibbons, J. F. and Wilson, S. D., Appl. Phys. Lett. 48, 1012 (1986).CrossRefGoogle Scholar
[4] Sturm, J. c., Gronet, C. M. and Gibbons, J. F., IEEE Electron Device Lett., EDL–7, 282 (1986).CrossRefGoogle Scholar
[5] Turner, S., Gronet, C. and Gibbons, J., Appl. Phys. Lett. to be published.Google Scholar
[6] Gronet, C. M., King, C. A. and Gibbons, J. F., J. Appl. Physics, to be published.Google Scholar
[7] Sturm, J., Gronet, C., King, C., Wilson, S. and Gibbons, J., IEEE Electron Device Lett. EDL–7, 577 (1986).Google Scholar
[8] Tromson, C. A., Gibart, P., Druilhe, R., Monteil, Y., Bouix, J. and Jani, B. El, Rev. Phys. Appl. (France) 20, 8, 569–574 (Aug. 1985).Google Scholar